Design and Fabrication of GaInAsP-InP VCSEL with two a-Si/a-SiNx Bragg Reflectors
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Design and Development of Short and Long Wavelength Infrared Vertical Cavity Surface Emitting Lasers
The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular...
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This paper discusses the issues involving the design and fabrication of vertical-cavity surface-emitting lasers (VCSEL’s). A review of the basic experimental structures is given, with emphasis on recent developments in distributed Bragg reflectors, gain media, as well as current and optical confinement techniques. The paper describes present VCSEL performance, in particular, those involving sel...
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The molecular beam epitaxy growth of AlAsSb/Al 0.04 Ga 0.96 AsSb distributed Bragg reflectors lattice-matched to InP is studied. The fabrication and characterization of two such reflectors are reported. Fine structural and optical properties of these samples are investigated using double crystal X-ray diffraction, scanning electron microscopy and reflectivity measurements. Main device performan...
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Unlike a vertical-cavity surface-emitting laser (VCSEL), which comprises two highly reflecting distributed Bragg reflectors (DBRs), the extended cavity in VECSELs employs a third mirror. The fabrication of such a device requires a long process chain, including the patterning of the VCSEL structures, definition of the extended optical resonator, mirror coating and die bonding. While VCSELs have ...
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